000 | 01258nam a2200205 4500 | ||
---|---|---|---|
020 | _a9780323856775 | ||
082 |
_a621.381 _bA261B |
||
100 |
_aAgarwal, Harshit _946302 |
||
245 |
_aBsim-Bulk Mosfet Model for IC Design-Digital, Analog, RF and High-Voltage _cby Harshit Agarwal and others. |
||
260 |
_aUnited State _bElsevier _c2023 |
||
300 |
_avii, 262p. _bPB |
||
520 | _aBSIM-Bulk MOSFET Model for IC Design - Digital, Analog, RF and High-Voltage provides in-depth knowledge of the internal operation of the model. The authors not only discuss the fundamental core of the model, but also provide details of the recent developments and new real-device effect models. In addition, the book covers the parameter extraction procedures, addressing geometrical scaling, temperatures, and more. There is also a dedicated chapter on extensive quality testing procedures and experimental results. This book discusses every aspect of the model in detail, and hence will be of significant use for the industry and academia. | ||
650 |
_aBulk MOSFET _946311 |
||
650 |
_aIC Design _946312 |
||
650 |
_aHigh-Voltage ICs _946313 |
||
700 |
_aGupta, Cheatan _946314 |
||
700 |
_aChauhan, Yogesh Singh _946304 |
||
700 |
_aHu, Chenming _946305 |
||
942 | _cBK | ||
999 |
_c16799 _d16799 |