| 000 | 02000nmm a2200385 i 4500 | ||
|---|---|---|---|
| 005 | 20230705152728.0 | ||
| 008 | 220118t20222022njua ob 001 0 eng | ||
| 010 | _a 2022000572 | ||
| 020 |
_a1119774381 _qelectronic publication |
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| 020 |
_a9781119774457 _qAdobe _qelectronic book |
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| 020 |
_a1119774454 _qAdobe _qelectronic book |
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| 020 |
_a9781119774419 _qelectronic book |
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| 020 |
_a1119774411 _qelectronic book |
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| 020 |
_a9781119774389 _q(electronic bk.) |
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| 020 |
_z9781119774372 _qhardcover |
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| 082 |
_a621.3815 _223/eng/20220215 |
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| 100 |
_aPham, Tuan Anh _c(Researcher), _eauthor. _922350 |
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| 245 |
_aWide bandgap nanowires : _bsynthesis, properties, and applications / _cTuan Anh Pham, Toan Dinh, Nam-Trung Nguyen, Hoang-Phuong Phan. |
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| 260 |
_aHoboken, NJ : _bJohn Wiley & Sons, Inc., _c2022. |
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| 300 |
_a1 online resource (xii, 251 pages) : _billustrations (some color) |
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| 504 | _aIncludes bibliographical references and index. | ||
| 520 |
_a"The first part of the book gives an overview of nanotechnology-enabled fabrication of wide band gap nanowires, covering bottom-up, top-down and hybrid approaches. The second part reviews their electrical, mechanical, optical and thermal properties which are the basis for realizing the sensor and energy device applications that are the focus of the third part."-- _cProvided by publisher. |
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| 590 | _bWiley Frontlist Obook All English 2022 | ||
| 650 |
_aNanowires. _922351 |
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| 650 |
_aWide gap semiconductors. _922352 |
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| 650 | 2 |
_aNanowires _922353 |
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| 650 | 6 |
_aNanofils. _922354 |
|
| 650 | 6 |
_aSemi-conducteurs à large bande interdite. _922355 |
|
| 650 |
_aNanowires. _2fast _0(OCoLC)fst01032641 _922351 |
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| 650 |
_aWide gap semiconductors. _2fast _0(OCoLC)fst01174923 _922352 |
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| 700 |
_aDinh, Toan, _eauthor. _922356 |
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| 700 |
_aNguyen, Nam-Trung, _d1970- _eauthor. _922357 |
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| 700 |
_aPhan, Hoang-Phuong, _eauthor. _922358 |
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| 856 |
_uhttps://doi.org/10.1002/9781119774419 _zWiley Online Library |
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| 999 |
_c13874 _d13874 |
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