Modeling and Simulation of Gallium Nitride High Electron Mobility Transistors and Optimization of Buffer Layer by Vipin Joshi

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TextPublication details: IIT Jodhpur Department of Electrical Engineering 2019Description: xiv, 80pSubject(s):

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Item type	Home library	Call number	Status	Date due	Barcode	Item holds
Thesis	S. R. Ranganathan Learning Hub	621.381 52 J78M (Browse shelf(Opens below))	Not for loan		TP00038

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