Modeling and Simulation of Gallium Nitride High Electron Mobility Transistors and Optimization of Buffer Layer by Vipin Joshi
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TextPublication details: IIT Jodhpur Department of Electrical Engineering 2019Description: xiv, 80pSubject(s): DDC classification: - 621.381 52Â J78M
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Thesis
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S. R. Ranganathan Learning Hub | 621.381 52 J78M (Browse shelf(Opens below)) | Not for loan | TP00038 |
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| 621.381 52 D262Q Quantum Transport Atom to transistor | 621.381 52 H661E Electrochemistry of nanomaterials | 621.381 52 H661E Electrochemistry of nanomaterials | 621.381 52 J78M Modeling and Simulation of Gallium Nitride High Electron Mobility Transistors and Optimization of Buffer Layer | 621.381 52 K683N Nanocrystal Quantum Dots | 621.381 52 K683N Nanocrystal Quantum Dots | 621.381 52 K683S Semiconductor and Metal Nanocrystals synthesis and electronic and optical properties |
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